Spin dynamics in the regime of hopping conductivity
نویسندگان
چکیده
منابع مشابه
Orbital ac spin-Hall effect in the hopping regime.
The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(omega) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to omeg...
متن کاملSpin-catalyzed hopping conductivity in disordered strongly interacting quantum wires
S. A. Parameswaran1,2 and S. Gopalakrishnan2,3,4 1Department of Physics and Astronomy, University of California, Irvine, California 92697, USA 2Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA 3Department of Physics and Burke Institute, California Institute of Technology, Pasadena, California 91125, USA 4Department of Engineering Science an...
متن کاملthe study of bright and surface discrete cavity solitons dynamics in saturable nonlinear media
امروزه سالیتون ها بعنوان امواج جایگزیده ای که تحت شرایط خاص بدون تغییر شکل در محیط منتشر می-شوند، زمینه مطالعات گسترده ای در حوزه اپتیک غیرخطی هستند. در این راستا توجه به پدیده پراش گسسته، که بعنوان عامل پهن شدگی باریکه نوری در آرایه ای از موجبرهای جفت شده، ظاهر می گردد، ضروری است، زیرا سالیتون های گسسته از خنثی شدن پراش گسسته در این سیستم ها بوسیله عوامل غیرخطی بوجود می آیند. گسستگی سیستم عامل...
Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime
We investigate the magnetoresistance of epitaxially grown, heavily doped ntype GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance Rxx in the quantum Hall effect regime can be well described by a hopping law (Rxx ∝ exp {−(T0/T ) }) with p ≈ 0.6. We discuss this result in terms of variable range hopping...
متن کاملHopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2 (RESEARCH NOTE)
The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this w...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: JETP Letters
سال: 2007
ISSN: 0021-3640,1090-6487
DOI: 10.1134/s0021364007010110